Invention Grant
- Patent Title: Balanced three-level read disturb management in a memory device
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Application No.: US17132490Application Date: 2020-12-23
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Publication No.: US11763899B2Publication Date: 2023-09-19
- Inventor: Jun Jun Wang , Hua Tan
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Greenberg Traurig
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C29/44 ; G11C16/26 ; G11C16/08

Abstract:
Methods, systems, devices, and computer-readable media for performing read disturb management of a memory device. A method includes retrieving a value of a read counter for a block associated with a read request issued to a memory array; refreshing valid word lines in the block if the value of the read counter exceeds a first threshold; identifying a set of valid word lines in the block if the value of the read counter exceeds a second threshold, the second threshold lower than the first threshold; identifying a subset of the set of valid word lines, the subset of the set of valid word lines including word lines having an error rate above a pre-configured error rate threshold; and refreshing the subset of the set of valid word lines.
Information query