公开(公告)号：US11763899B2

公开(公告)日：2023-09-19

申请号：US17132490

申请日：2020-12-23

Applicant: Micron Technology, Inc.

Inventor： Jun Jun Wang ,  Hua Tan

IPC: G11C16/34 ,  G11C29/44 ,  G11C16/26 ,  G11C16/08

CPC classification number: G11C16/3431 ,  G11C16/08 ,  G11C16/26 ,  G11C29/44

Abstract: Methods, systems, devices, and computer-readable media for performing read disturb management of a memory device. A method includes retrieving a value of a read counter for a block associated with a read request issued to a memory array; refreshing valid word lines in the block if the value of the read counter exceeds a first threshold; identifying a set of valid word lines in the block if the value of the read counter exceeds a second threshold, the second threshold lower than the first threshold; identifying a subset of the set of valid word lines, the subset of the set of valid word lines including word lines having an error rate above a pre-configured error rate threshold; and refreshing the subset of the set of valid word lines.