Invention Grant
- Patent Title: Gas recovering apparatus, semiconductor manufacturing system, and gas recovering method
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Application No.: US17350912Application Date: 2021-06-17
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Publication No.: US11766635B2Publication Date: 2023-09-26
- Inventor: Yuya Matsubara
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 20150742 2020.09.08
- Main IPC: B01D53/22
- IPC: B01D53/22 ; C01B23/00

Abstract:
According to one embodiment, a gas recovering apparatus includes a casing and a tube. The casing is provided with an inlet through which a gas flows in, a first outlet for discharging a first gas containing a gas to be recovered of the gas, and a second outlet for discharging a second gas other than the first gas of the gas. The casing is evacuated via the first outlet. The tube is provided in the casing from the inlet to the second outlet, and has a high permeability to the first gas and a low permeability to the second gas.
Public/Granted literature
- US20220072473A1 GAS RECOVERING APPARATUS, SEMICONDUCTOR MANUFACTURING SYSTEM, AND GAS RECOVERING METHOD Public/Granted day:2022-03-10
Information query
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