- 专利标题： Gate-all-around floating-gate field effect memory transistor constructions including ferroelectric gate insulator
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申请号： US17501464申请日： 2021-10-14
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公开(公告)号： US11769542B2公开(公告)日： 2023-09-26
- 发明人: Kamal M. Karda , Chandra Mouli , Durai Vishak Nirmal Ramaswamy , F. Daniel Gealy
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc
- 当前专利权人： Micron Technology, Inc
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John P.S.
- 分案原申请号： US16011771 2018.06.19
- 主分类号： G11C11/22
- IPC分类号： G11C11/22 ; H01L29/788 ; H01L29/423 ; H01L29/78 ; H01L29/66 ; H10B51/30
摘要：
A field effect transistor construction includes a semiconductive channel core. A source/drain region is at opposite ends of the channel core. A gate is proximate a periphery of the channel core. A gate insulator is between the gate and the channel core. The gate insulator has local regions radially there-through that have different capacitance at different circumferential locations relative to the channel core periphery. Additional constructions, and methods, are disclosed.
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