Invention Grant
- Patent Title: Optoelectronic integrated substrate, preparation method thereof, and optoelectronic integrated circuit
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Application No.: US17500963Application Date: 2021-10-14
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Publication No.: US11769850B2Publication Date: 2023-09-26
- Inventor: Rui Huang , Haibin Zhu
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Ling and Yang Intellectual Property
- Agent Ling Wu; Stephen Yang
- Priority: CN 2110191311.0 2021.02.19
- Main IPC: H01L31/105
- IPC: H01L31/105 ; H01L31/02 ; H01L31/0224 ; H01L31/20

Abstract:
An optoelectronic integrated substrate, a preparation method thereof and an optoelectronic integrated circuit. The electronic integrated substrate includes a base substrate and an electronic device and a photo-diode disposed on the base substrate, wherein the photo-diode includes an ohmic contact layer and an intrinsic amorphous silicon layer, and the ohmic contact layer and the intrinsic amorphous silicon layer are sequentially arranged along a direction parallel to the plane of the base substrate and are connected.
Public/Granted literature
- US20220271185A1 Optoelectronic Integrated Substrate, Preparation Method Thereof, and Optoelectronic Integrated Circuit Public/Granted day:2022-08-25
Information query
IPC分类: