Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US17519051Application Date: 2021-11-04
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Publication No.: US11770965B2Publication Date: 2023-09-26
- Inventor: Hideaki Kuwabara , Hideto Ohnuma
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Husch Blackwell LLP
- Priority: JP 05302315 2005.10.17
- Main IPC: H01L51/56
- IPC: H01L51/56 ; H01L27/32 ; H01L33/36 ; H01L51/52 ; H10K71/00 ; H10K50/80 ; H10K59/10 ; H10K59/122 ; H10K59/124 ; H10K59/121 ; H10K71/16 ; H10K102/00

Abstract:
As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the lime of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.
Public/Granted literature
- US20220059809A1 Semiconductor Device And Manufacturing Method Thereof Public/Granted day:2022-02-24
Information query
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