Invention Grant
- Patent Title: Charge transfer between gate terminals of sub-threshold current reduction circuit transistors and related apparatuses and methods
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Application No.: US17656397Application Date: 2022-03-24
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Publication No.: US11777488B2Publication Date: 2023-10-03
- Inventor: Hiroshi Akamatsu , Yuan He , Toru Ishikawa
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: G06F13/40
- IPC: G06F13/40 ; H03K17/16 ; G11C7/10

Abstract:
Charge transfer between gate terminals of sub-threshold current reduction circuit (SCRC) transistors and related apparatuses and methods are disclosed. An apparatus includes a first output terminal electrically connected to a pull-up gate terminal of at least one pull-up SCRC transistor and a second output terminal electrically connected to a pull-down gate terminal of at least one pull-down SCRC transistor. The apparatus also includes a first resistive path between a first input terminal and the first output terminal and a second resistive path between the second input terminal and the second output terminal. The apparatus further includes a charge transfer gate electrically connected between the first resistive path and the second resistive path.
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