Invention Grant
- Patent Title: Memory with swap mode
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Application No.: US17470579Application Date: 2021-09-09
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Publication No.: US11783874B2Publication Date: 2023-10-10
- Inventor: Taehyeon Park , Byunghoon Jeong , Chiweon Yoon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR 20200127539 2020.09.29 KR 20210010358 2021.01.25
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C8/06 ; G11C7/20

Abstract:
A memory chip, a memory controller, and an operating method of the memory chip are provided. The memory chip includes a plurality of pins; and an interface circuit configured to receive a swap command set from a memory controller through the plurality of pins, obtain a swap command and a swap address from the swap command set, generate a swap enable signal based on the swap command and the swap address, and swap and output a data signal according to the swap enable signal.
Public/Granted literature
- US20220101893A1 MEMORY CHIP, MEMORY CONTROLLER AND OPERATING METHOD OF THE MEMORY CHIP Public/Granted day:2022-03-31
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