Invention Grant
- Patent Title: Redistribution layer connection
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Application No.: US16936263Application Date: 2020-07-22
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Publication No.: US11784151B2Publication Date: 2023-10-10
- Inventor: Aniket Patil , Hong Bok We , Marcus Hsu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
Examples herein include die to metallization structure connections that eliminate the solder joint to reduce the resistance and noise on the connection. In one example, a first die is attached to a metallization layer by a plurality of copper interconnections and a second is attached to the metallization layer opposite the first die through another plurality of copper interconnections. In this example, the copper interconnects may connect the respective die to a metallization structure in the metallization layer.
Public/Granted literature
- US20220028816A1 REDISTRIBUTION LAYER CONNECTION Public/Granted day:2022-01-27
Information query
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