Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US17696157Application Date: 2022-03-16
-
Publication No.: US11784171B2Publication Date: 2023-10-10
- Inventor: Ae-Nee Jang , Inhyo Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20200009017 2020.01.23
- Main IPC: H01L25/10
- IPC: H01L25/10 ; H01L23/31 ; H01L23/538 ; H01L21/683 ; H01L21/48 ; H01L21/56 ; H01L21/78 ; H01L23/00 ; H01L25/00

Abstract:
A semiconductor device includes a first package, and a second package stacked on the first package. Each of the first and second packages includes a first redistribution substrate having a first redistribution pattern, a first semiconductor chip on the first redistribution substrate and connected to the first redistribution pattern, a first molding layer covering the first semiconductor chip on the first redistribution substrate, a first through-electrode penetrating the first molding layer so as to be connected to the first redistribution pattern, and a second through-electrode penetrating the first molding layer and not connected to the first redistribution pattern. The first redistribution pattern of the second package is electrically connected to the second through-electrode of the first package.
Public/Granted literature
- US20220208743A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-06-30
Information query
IPC分类: