- 专利标题: Semiconductor device
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申请号: US17696157申请日: 2022-03-16
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公开(公告)号: US11784171B2公开(公告)日: 2023-10-10
- 发明人: Ae-Nee Jang , Inhyo Hwang
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR 20200009017 2020.01.23
- 主分类号: H01L25/10
- IPC分类号: H01L25/10 ; H01L23/31 ; H01L23/538 ; H01L21/683 ; H01L21/48 ; H01L21/56 ; H01L21/78 ; H01L23/00 ; H01L25/00
摘要:
A semiconductor device includes a first package, and a second package stacked on the first package. Each of the first and second packages includes a first redistribution substrate having a first redistribution pattern, a first semiconductor chip on the first redistribution substrate and connected to the first redistribution pattern, a first molding layer covering the first semiconductor chip on the first redistribution substrate, a first through-electrode penetrating the first molding layer so as to be connected to the first redistribution pattern, and a second through-electrode penetrating the first molding layer and not connected to the first redistribution pattern. The first redistribution pattern of the second package is electrically connected to the second through-electrode of the first package.
公开/授权文献
- US20220208743A1 SEMICONDUCTOR DEVICE 公开/授权日:2022-06-30
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