- 专利标题: Power path switch circuit
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申请号: US17367568申请日: 2021-07-05
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公开(公告)号: US11784570B2公开(公告)日: 2023-10-10
- 发明人: Hsin-Yi Wu , Chien-Fu Tang
- 申请人: Richtek Technology Corporation
- 申请人地址: TW Zhubei
- 专利权人: RICHTEK TECHNOLOGY CORPORATION
- 当前专利权人: RICHTEK TECHNOLOGY CORPORATION
- 当前专利权人地址: TW Zhubei
- 代理机构: Tung & Associates
- 优先权: TW 9142813 2020.12.04
- 主分类号: H02M3/335
- IPC分类号: H02M3/335 ; H02M7/217 ; H01L29/78 ; H03K17/082 ; G01R19/00
摘要:
A power path switch circuit includes: a power transistor unit including: a first vertical double-diffused metal oxide semiconductor (VDMOS) device, wherein a first current outflow end of the first VDMOS device is coupled to an output end of a power path; and a second VDMOS device, wherein a first current inflow end of the first VDMOS device and a second current inflow end of the second VDMOS device are coupled with a supply end of the power path; and a voltage locking circuit coupled to the first current outflow end and the second current outflow end, for locking a voltage at the second current outflow end to a voltage at the first current outflow end, so that there is a predetermined ratio between a first conductive current flowing through the first VDMOS device and a second conductive current flowing through the second VDMOS device.
公开/授权文献
- US20220060116A1 POWER PATH SWITCH CIRCUIT 公开/授权日:2022-02-24
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