Invention Grant
- Patent Title: Power path switch circuit
-
Application No.: US17367568Application Date: 2021-07-05
-
Publication No.: US11784570B2Publication Date: 2023-10-10
- Inventor: Hsin-Yi Wu , Chien-Fu Tang
- Applicant: Richtek Technology Corporation
- Applicant Address: TW Zhubei
- Assignee: RICHTEK TECHNOLOGY CORPORATION
- Current Assignee: RICHTEK TECHNOLOGY CORPORATION
- Current Assignee Address: TW Zhubei
- Agency: Tung & Associates
- Priority: TW 9142813 2020.12.04
- Main IPC: H02M3/335
- IPC: H02M3/335 ; H02M7/217 ; H01L29/78 ; H03K17/082 ; G01R19/00

Abstract:
A power path switch circuit includes: a power transistor unit including: a first vertical double-diffused metal oxide semiconductor (VDMOS) device, wherein a first current outflow end of the first VDMOS device is coupled to an output end of a power path; and a second VDMOS device, wherein a first current inflow end of the first VDMOS device and a second current inflow end of the second VDMOS device are coupled with a supply end of the power path; and a voltage locking circuit coupled to the first current outflow end and the second current outflow end, for locking a voltage at the second current outflow end to a voltage at the first current outflow end, so that there is a predetermined ratio between a first conductive current flowing through the first VDMOS device and a second conductive current flowing through the second VDMOS device.
Public/Granted literature
- US20220060116A1 POWER PATH SWITCH CIRCUIT Public/Granted day:2022-02-24
Information query
IPC分类: