Invention Grant
- Patent Title: Ink composition for forming an organic layer of a semiconductor
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Application No.: US16497879Application Date: 2018-03-29
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Publication No.: US11787965B2Publication Date: 2023-10-17
- Inventor: Kay Lederer , Steffen Runge , Jerome Ganier , Anke Limbach
- Applicant: Novaled GmbH
- Applicant Address: DE Dresden
- Assignee: Novaled GmbH
- Current Assignee: Novaled GmbH
- Current Assignee Address: DE Dresden
- Agency: Eversheds Sutherland (US) LLP
- Priority: EP 163956 2017.03.30
- International Application: PCT/EP2018/058154 2018.03.29
- International Announcement: WO2018/178273A 2018.10.04
- Date entered country: 2019-09-26
- Main IPC: C09D11/52
- IPC: C09D11/52 ; C09D11/102 ; C09D11/38 ; H01L27/30 ; H01L27/32 ; H01L51/00 ; H01L51/50 ; H10K39/10 ; H10K59/122 ; H10K59/173 ; H10K85/60 ; H10K85/10 ; H10K85/30 ; H10K50/11 ; H10K50/17 ; H10K50/155 ; H10K71/13 ; H10K101/30 ; H10K101/40 ; H10K102/00
Abstract:
The present invention is directed to an ink composition for forming an organic semiconductor layer, wherein the ink composition comprises: —at least one p-type dopant comprising electron withdrawing groups; —at least one first auxiliary compound, wherein the first auxiliary compound is an aromatic nitrile compound, wherein the aromatic nitrile compound has about ≥1 to about ≤3 nitrile groups and a melting point of about
Public/Granted literature
- US20200032093A1 Ink Composition for Forming an Organic Layer of a Semiconductor Public/Granted day:2020-01-30
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