- 专利标题： Fin field effect transistor device structure
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申请号： US17870182申请日： 2022-07-21
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公开(公告)号： US11791215B2公开(公告)日： 2023-10-17
- 发明人: Shang-Wen Chang , Yi-Hsiung Lin , Yi-Hsun Chiu
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L27/088 ; H01L21/768
摘要：
A fin field effect transistor device structure is provided. A fin field effect transistor device structure includes a first fin structure and a second fin structure on a substrate. The fin field effect transistor device structure also includes a spacer layer surrounding the first fin structure and the second fin structure. The fin field effect transistor device structure further includes a power rail over the spacer layer between the first fin structure and the second fin structure. In addition, the fin field effect transistor device structure includes a first contact structure covering the first fin structure and connected to the power rail.
公开/授权文献
- US20220375794A1 FIN FIELD EFFECT TRANSISTOR DEVICE STRUCTURE 公开/授权日：2022-11-24
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