Invention Grant
- Patent Title: Semiconductor memory structure
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Application No.: US17320049Application Date: 2021-05-13
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Publication No.: US11792977B2Publication Date: 2023-10-17
- Inventor: Hsin-Wen Su , Shih-Hao Lin , Yu-Kuan Lin , Lien-Jung Hung , Ping-Wei Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: HAYNES AND BOONE, LLP
- Main IPC: H10B20/20
- IPC: H10B20/20

Abstract:
A semiconductor device includes a program word line and a read word line over an active region. Each of the program word line and the read word line extends along a line direction. Moreover, the program word line engages a first transistor channel and the read word line engages a second transistor channel. The semiconductor device also includes a first metal line over and electrically connected to the program word line and a second metal line over and electrically connected to the read word line. The semiconductor device further includes a bit line over and electrically connected to the first active region. Additionally, the program word line has a first width along a channel direction perpendicular to the line direction; the read word line has a second width along the channel direction; and the first width is less than the second width.
Public/Granted literature
- US20220367488A1 Semiconductor Memory Structure Public/Granted day:2022-11-17
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