Invention Grant
- Patent Title: Defect detection structures, semiconductor devices including the same, and methods of detecting defects in semiconductor dies
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Application No.: US17061380Application Date: 2020-10-01
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Publication No.: US11796587B2Publication Date: 2023-10-24
- Inventor: Junghyun Roh , Minjae Lee , Unho Cha
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Fish & Richardson P.C.
- Priority: KR 20200040758 2020.04.03
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L23/50 ; H01L23/552 ; H01L23/528 ; H01L23/522

Abstract:
A semiconductor device includes a semiconductor die, a defect detection structure and an input-output circuit. The semiconductor die includes a central region and a peripheral region surrounding the central region. The peripheral region includes a left-bottom corner region, a left-upper corner region, a right-upper corner region and a right-bottom corner region. The defect detection structure is formed in the peripheral region. The defect detection structure includes a first conduction loop passing through the left-bottom corner region, a second conduction loop passing through the right-bottom corner region, a third conduction loop passing through the left-bottom corner region and the left-upper corner region, a fourth conduction loop passing through the right-bottom corner region and the right-upper corner region, and a shielding loop to shield electrical interference between the first through fourth conduction loops. The input-output circuit is electrically connected to end nodes of the first conduction loop, the second conduction loop, the third conduction loop and the fourth conduction loop.
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