Invention Grant
- Patent Title: Pattern forming method and method for manufacturing semiconductor device
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Application No.: US17465485Application Date: 2021-09-02
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Publication No.: US11798806B2Publication Date: 2023-10-24
- Inventor: Yusuke Kasahara
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 21043157 2021.03.17
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/027 ; G03F7/00
Abstract:
A pattern forming method includes: forming a first film on a first region of a processing target film; forming a second film containing metal and carbon and different from the first film, on a second region of the processing target film; etching the first film; and etching the processing target film using the first film after the etching while the second film is exposed.
Public/Granted literature
- US20220301872A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2022-09-22
Information query
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