Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16897167Application Date: 2020-06-09
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Publication No.: US11798940B2Publication Date: 2023-10-24
- Inventor: Pin-Dai Sue , Tzung-Yo Hung , Jung-Hsuan Chen , Ting-Wei Chiang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/088 ; H01L23/528 ; H01L21/822 ; H01L21/8234 ; H01L29/66

Abstract:
A semiconductor device includes a first transistor disposed over a substrate, a second disposed over the first transistor, and a conductive trace. The first transistor includes a first active area extending on a first layer. The second transistor includes a second active area extending on a second layer above the first layer. The conductive trace extends on a third layer. The first to third layers are separated from each other in a first direction, and the third layer is interposed between the first and second layers. The first active area, the second active area, and the conductive trace overlap in a layout view.
Information query
IPC分类: