Invention Grant
- Patent Title: Tungsten film-forming method, film-forming system and storage medium
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Application No.: US17172589Application Date: 2021-02-10
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Publication No.: US11802334B2Publication Date: 2023-10-31
- Inventor: Takashi Sameshima , Koji Maekawa , Katsumasa Yamaguchi
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JP 18029006 2018.02.21
- The original application number of the division: US16276867 2019.02.15
- Main IPC: C23C16/14
- IPC: C23C16/14 ; C23C16/24 ; H01L21/285 ; H01L21/768 ; C23C16/455 ; C23C16/02 ; C23C16/52
Abstract:
There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.
Public/Granted literature
- US20210164095A1 Tungsten Film-Forming Method, Film-Forming System and Storage Medium Public/Granted day:2021-06-03
Information query
IPC分类:
