Invention Grant
- Patent Title: Haloalkynyl dicobalt hexacarbonyl precursors for chemical vapor deposition of cobalt
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Application No.: US16952985Application Date: 2020-11-19
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Publication No.: US11804375B2Publication Date: 2023-10-31
- Inventor: Sangbum Han , Seobong Chang , Bryan C. Hendrix , Jaeeon Park , Thomas H. Baum
- Applicant: ENTEGRIS, INC.
- Applicant Address: US MA Billerica
- Assignee: ENTEGRIS, INC.
- Current Assignee: ENTEGRIS, INC.
- Current Assignee Address: US MA Billerica
- Main IPC: H01L21/285
- IPC: H01L21/285 ; C23C16/06 ; C23C16/16 ; C07F15/06 ; C23C16/18

Abstract:
The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.
Public/Granted literature
- US20210082708A1 HALOALKYNYL DICOBALT HEXACARBONYL PRECURSORS FOR CHEMICAL VAPOR DEPOSITION OF COBALT Public/Granted day:2021-03-18
Information query
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