公开(公告)号：US12237170B2

公开(公告)日：2025-02-25

申请号：US18374637

申请日：2023-09-28

Applicant: ENTEGRIS, INC.

Inventor： Sangbum Han ,  Seobong Chang ,  Bryan C. Hendrix ,  Jaeeon Park ,  Thomas H. Baum

IPC: H01L21/285 ,  C07F15/06 ,  C23C16/06 ,  C23C16/16 ,  C23C16/18

Abstract: The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co2(CO)6(R3C≡CR4), where R3 and R4 are different organic moieties and R4 is more electronegative or more electron withdrawing compared to R3.

公开(公告)号：US20250034700A1

公开(公告)日：2025-01-30

申请号：US18785339

申请日：2024-07-26

Applicant: ENTEGRIS, INC.

Inventor： Carlo Waldfried ,  Surendra Maharjan ,  Stephen Longo

IPC: C23C16/30 ,  C23C16/52

Abstract: Surface modified substrates and related methods are provided. A substrate having a modified surface comprises a first region and a second region. The first region is located above the second region. The first region comprises a nickel fluoride. The second region comprises a nickel alloy. A concentration of the nickel fluoride gradually decreases from the first region to the second region.

公开(公告)号：US12209105B2

公开(公告)日：2025-01-28

申请号：US17901569

申请日：2022-09-01

Applicant: ENTEGRIS, INC.

Inventor： Philip S. H. Chen ,  Eric Condo ,  Bryan C. Hendrix ,  Thomas H. Baum ,  David Kuiper

IPC: C07F7/10 ,  C01B21/082 ,  C07F7/08 ,  C07F7/18 ,  C23C16/30 ,  C23C16/36 ,  C23C16/455 ,  H01L21/02

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

公开(公告)号：US12196368B2

公开(公告)日：2025-01-14

申请号：US17495363

申请日：2021-10-06

Applicant: Entegris, Inc.

Inventor： Oleg Byl

IPC: F17C11/00 ,  B01J20/22 ,  B01J20/28

Abstract: Described are storage and dispensing systems and related methods, for the selective dispensing germane (GeH4) as a reagent gas from a vessel in which the germane is held in sorptive relationship to a solid adsorbent medium that includes a zeolitic imidazolate framework.

公开(公告)号：US20250003072A1

公开(公告)日：2025-01-02

申请号：US18755011

申请日：2024-06-26

Applicant: ENTEGRIS, INC.

Inventor： Joseph E. Reynolds, III ,  Michael Watson ,  Bryan C. Hendrix ,  Sara Moghaddam ,  Devon N. Dion ,  Benjamin R. Garrett ,  Carlo Waldfried ,  Virendra Warke

IPC: C23C16/455 ,  C23C16/44

Abstract: High purity molybdenum-containing precursors and related systems and methods are provided. A precursor delivery system comprises a vaporizer vessel that is configured to contain a vaporizable precursor that, when vaporized, produces a precursor vapor. The precursor delivery system comprises at least one protective surface treatment. The at least one protective surface treatment covers a sufficient amount of at least one gas-exposed surface of the precursor delivery system to reduce an amount of at least one contaminant in the precursor vapor as compared to a precursor vapor produced by a precursor delivery system without the at least one protective surface treatment.

公开(公告)号：US20250002509A1

公开(公告)日：2025-01-02

申请号：US18884024

申请日：2024-09-12

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas M. Cameron

IPC: C07F7/22

Abstract: The invention provides a facile process for preparing certain organotin compounds having alkyl and aryl substituents. These compounds are useful as intermediates in the synthesis of certain alkylamino- and alkoxy-substituted alkyl tin compounds, which are in turn useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

公开(公告)号：US20240412981A1

公开(公告)日：2024-12-12

申请号：US18737743

申请日：2024-06-07

Applicant: ENTEGRIS, INC.

Inventor： Phil S.H. Chen ,  Bryan C. Hendrix ,  Eric Condo

IPC: H01L21/3205 ,  C23C16/04 ,  C23C16/06 ,  C23C16/448 ,  H01L23/532

Abstract: Selective ruthenium deposition and related systems and methods are provided. A method comprises vaporizing at least a portion of a ruthenium precursor to produce a vaporized ruthenium precursor; contacting a first surface portion and a second surface portion of a substrate with the vaporized ruthenium precursor and at least one reducing gas; and depositing ruthenium on the first surface portion of the substrate with a selectivity of at least 25 Å relative to the second surface portion of the substrate. A device comprises a substrate having a first surface portion and a second surface portion adjacent to the first surface portion; and a ruthenium layer located on the first surface portion of the substrate, wherein the ruthenium layer has a thickness of at least 25 Å on the first surface portion of the substrate; wherein the second surface portion of the substrate does not comprise ruthenium.

公开(公告)号：US20240410812A1

公开(公告)日：2024-12-12

申请号：US18732519

申请日：2024-06-03

Applicant: ENTEGRIS, INC.

Inventor： Michael Manfred

IPC: G01N15/1434 ,  G01N15/14

Abstract: This description relates to optical particle counters, methods of using optical particle counters, and methods of reducing particle count errors during use of an optical particle counter. The method includes placing an optical isolator between the laser and the flow cell to allow laser light to pass into the flow cell, and to reduce the intensity of light re-directed back into the laser as optical feedback capable of causing mode hopping.

公开(公告)号：US20240409430A1

公开(公告)日：2024-12-12

申请号：US18679227

申请日：2024-05-30

Applicant: ENTEGRIS, INC.

Inventor： Juan Valdez ,  Michael Watson ,  Scott L. Battle ,  Matthew W. Calhoun ,  Benjamin R. Garrett ,  Wesley W. Goggans

IPC: C01G27/04 ,  C23C16/08 ,  C23C16/448

Abstract: A precursor vessel comprises a hafnium halide precursor. The hafnium halide precursor comprises less than 1 ppm of at least one impurity. The at least one impurity comprises at least one of a titanium contaminant, a chromium contaminant, an aluminum contaminant, an iron contaminant, or any combination thereof. Related systems and related methods are also provided, including, for example and without limitation, systems for delivery of vapor precursors, methods for purifying a precursor, and the like.

公开(公告)号：US20240359157A1

公开(公告)日：2024-10-31

申请号：US18767936

申请日：2024-07-09

Applicant: ENTEGRIS, INC.

Inventor： Reena Srivastava ,  Baoquan Xie ,  Frank V. Belanger ,  Rocky D. Gipson

IPC: B01J20/20 ,  B01D53/02 ,  B01J20/28 ,  B01J20/282 ,  B01J20/30

CPC classification number: B01J20/20 ,  B01D53/02 ,  B01J20/28064 ,  B01J20/28066 ,  B01J20/282 ,  B01J20/3071 ,  B01J20/3085 ,  B01D2253/102 ,  B01D2253/306 ,  B01D2253/308 ,  B01D2257/70 ,  B01D2258/06

Abstract: Provided are certain activated carbonaceous materials which have been treated with dilute mineral acids to modify their surface chemistry and morphology. The modified activated carbonaceous materials of the disclosure are useful in removing certain contaminants from gaseous streams. In one embodiment, the contaminants are compounds containing silicon and oxygen moieties, such as alkyl silanols and alkyl siloxanes. The modified activated carbonaceous materials can be incorporated into filters and filter systems.