Invention Grant
- Patent Title: Semiconductor device and method of forming protective layer around cavity of semiconductor die
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Application No.: US17444611Application Date: 2021-08-06
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Publication No.: US11804416B2Publication Date: 2023-10-31
- Inventor: Saravuth Sirinorakul , Preecha Joymak , Natawat Kasikornrungroj , Wasu Aingkaew , Kawin Saiubol , Thanawat Jaengkrajarng
- Applicant: UTAC Headquarters Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: UTAC Headquarters Pte. Ltd.
- Current Assignee: UTAC Headquarters Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: PATENT LAW GROUP: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L21/56 ; H01L23/00

Abstract:
A semiconductor device has a semiconductor die with a sensor and a cavity formed into a first surface of the semiconductor die to provide access to the sensor. A protective layer is formed on the first surface of the semiconductor die around the cavity. An encapsulant is deposited around the semiconductor die. The protective layer blocks the encapsulant from entering the cavity. With the cavity clear of encapsulant, liquid or gas has unobstructed entry into cavity during operation of the semiconductor die. The clear entry for the cavity provides reliable sensor detection and measurement. The semiconductor die is disposed over a leadframe. The semiconductor die has a sensor. The protective layer can be a film. The protective layer can have a beveled surface. A surface of the leadframe can be exposed from the encapsulant. A second surface of the semiconductor die can be exposed from the encapsulant.
Public/Granted literature
- US20220077019A1 Semiconductor Device and Method of Forming Protective Layer Around Cavity of Semiconductor Die Public/Granted day:2022-03-10
Information query
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