Invention Grant
- Patent Title: Hybrid bonding structures and semiconductor devices including the same
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Application No.: US17467973Application Date: 2021-09-07
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Publication No.: US11804462B2Publication Date: 2023-10-31
- Inventor: Kunmo Chu , Junghoon Lee , Byonggwon Song
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20200114855 2020.09.08
- Main IPC: H01L23/00
- IPC: H01L23/00
Abstract:
A hybrid bonding structure and a semiconductor including the hybrid bonding structure are provided. The hybrid bonding structure includes a solder ball and a solder paste bonded to the solder ball. The solder paste may include solder particles including at least one of In, Zn, SnBiAg alloy, or SnBi alloy, and ceramic particles. The solder paste may include a flux. The solder particles may include Sn(42.0 wt %)-Ag(0.4 wt %)-Bi(57.5−X) wt %, and the ceramic particles include CeO2(X) wt %, where 0.05≤X≤0.1.
Public/Granted literature
- US20220077100A1 HYBRID BONDING STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME Public/Granted day:2022-03-10
Information query
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