发明授权
- 专利标题： Three-dimensional memory device with source structure and methods for forming the same
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申请号： US17550580申请日： 2021-12-14
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公开(公告)号： US11805650B2公开(公告)日： 2023-10-31
- 发明人: Wenxiang Xu , Wei Xu , Pan Huang , Ji Xia
- 申请人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 申请人地址： CN Wuhan
- 专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人地址： CN Wuhan
- 代理机构： BAYES PLLC
- 分案原申请号： US16863203 2020.04.30
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H10B43/27 ; H10B43/10 ; H10B43/35
摘要：
Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a method for forming a 3D memory device includes the following operations. First, a slit structure and a support structure are formed in a stack structure having interleaved a plurality of sacrificial material layers and a plurality of insulating material layers, the initial support structure between adjacent slit openings of the slit structure. A source structure is formed to include a source portion in each of the slit openings. A pair of first portions of a connection layer is formed in contact with and conductively connected to the source portion. A second portion of the connection layer is formed in contact with and conductively to the pair of first portions of the connection layer.
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