Invention Grant
- Patent Title: Method of forming backside illuminated image sensor device with shielding layer
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Application No.: US17744175Application Date: 2022-05-13
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Publication No.: US11810939B2Publication Date: 2023-11-07
- Inventor: Volume Chien , Su-Hua Chang , Chia-Yu Wei , Zen-Fong Huang , Chi-Cherng Jeng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- The original application number of the division: US14073580 2013.11.06
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/0216
Abstract:
A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.
Public/Granted literature
- US20220271071A1 METHOD OF FORMING BACKSIDE ILLUMINATED IMAGE SENSOR DEVICE WITH SHIELDING LAYER Public/Granted day:2022-08-25
Information query
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