发明授权
- 专利标题: Semiconductor package for high-speed data transmission and manufacturing method thereof
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申请号: US18056264申请日: 2022-11-17
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公开(公告)号: US11824021B2公开(公告)日: 2023-11-21
- 发明人: Huan-Neng Chen , Wen-Shiang Liao
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: WPAT LAW
- 代理商 Anthony King
- 主分类号: H01L23/66
- IPC分类号: H01L23/66 ; H01L21/48 ; H01L23/498 ; H01L23/538 ; H01L23/00 ; H01L25/00 ; H01P3/12 ; H01L25/18
摘要:
A method of manufacturing the semiconductor structure includes: providing a substrate; forming a first conductive via and a second conductive via extending in the substrate; depositing a first dielectric layer over the substrate and the first and second conductive vias; receiving a waveguide; moving the waveguide to a location over the first dielectric layer and aligning the waveguide with a position of the first dielectric layer; attaching the waveguide to the position of the first dielectric layer; forming a first conductive member and a second conductive member over the waveguide, the first conductive member and the second conductive member being in contact with the waveguide; and etching a backside of the substrate to electrically expose the first and second conductive vias. The first conductive member or the second conductive member is electrically connected to the first or second conductive via.
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