Invention Grant
- Patent Title: Semiconductor devices and methods for manufacturing the same
-
Application No.: US17582079Application Date: 2022-01-24
-
Publication No.: US11830853B2Publication Date: 2023-11-28
- Inventor: Ae-Nee Jang , Young Lyong Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR 20190075970 2019.06.25
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/31

Abstract:
Semiconductor devices may include a first semiconductor chip, a first redistribution layer on a bottom surface of the first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a second redistribution layer on a bottom surface of the second semiconductor chip, a mold layer extending on sidewalls of the first and second semiconductor chips and on the bottom surface of the first semiconductor chip, and an external terminal extending through the mold layer and electrically connected to the first redistribution layer. The second redistribution layer may include an exposed portion. The first redistribution layer may include a first conductive pattern electrically connected to the first semiconductor chip and a second conductive pattern electrically insulated from the first semiconductor chip. The exposed portion of the second redistribution layer and the second conductive pattern of the first redistribution layer may be electrically connected by a first connection wire.
Public/Granted literature
- US20220149013A1 SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME Public/Granted day:2022-05-12
Information query
IPC分类: