- 专利标题： Nitride semiconductor device with element isolation area
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申请号： US17190070申请日： 2021-03-02
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公开(公告)号： US11830916B2公开(公告)日： 2023-11-28
- 发明人: Akira Yoshioka , Yasuhiro Isobe , Hung Hung , Hitoshi Kobayashi , Tetsuya Ohno , Toru Sugiyama
- 申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人： Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人地址： JP Tokyo; JP Tokyo
- 代理机构： Kim & Stewart LLP
- 优先权： JP 20155011 2020.09.15
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L29/20 ; H01L29/06 ; H01L29/417
摘要：
A semiconductor device includes first and second nitride semiconductor layers. The second layer on the first nitride has a first region, a second region, and a third region between the first and second regions. A first gate electrode is in the first region and extends parallel to a surface of a substrate. A first source electrode is in the first region and extends in the first direction. A second gate electrode in the second region and extends in the first direction. A second source electrode is in the second region and extends in the first direction. A drain electrode coupled to a first and a second wiring. The first wiring directly contacts the second nitride semiconductor layer in the first region. The second wiring directly contacts the second nitride semiconductor layer in the second region. An insulation material is in the third region.
公开/授权文献
- US20220085175A1 SEMICONDUCTOR DEVICE 公开/授权日：2022-03-17
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