公开(公告)号：US12231067B2

公开(公告)日：2025-02-18

申请号：US18115550

申请日：2023-02-28

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

Inventor： Yutaka Yamada ,  Koji Suzuki ,  Ken Tanabe

IPC: H02P23/16 ,  H02P23/00

Abstract: A motor controller includes a first control circuit, a second control circuit, a determination circuit, and a command circuit. The first control circuit outputs a first control value based on a rule base from a command value of an angular velocity and a measured value of an angular velocity. The second control circuit outputs a second control value based on a learned model from the command value of the angular velocity and the measured value of the angular velocity. The determination circuit determines a state based on at least the second control value. The command circuit acquires and outputs a control command value from the first control value and the second control value based on a result determined by the determination circuit.

公开(公告)号：US20250056826A1

公开(公告)日：2025-02-13

申请号：US18429925

申请日：2024-02-01

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor： Yosuke KAJIWARA ,  Hiroshi ONO

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/423

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor member, a second semiconductor member, a first insulating member, and a second insulating member. The first to third electrodes extend along a first direction. The third electrode includes a first electrode portion. The first semiconductor member includes Alx1Ga1-x1N (0≤x1

公开(公告)号：US20250054928A1

公开(公告)日：2025-02-13

申请号：US18601865

申请日：2024-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

Inventor： Jia Liu

IPC: H01L25/16 ,  H01L25/075 ,  H01L27/12 ,  H01L33/62

Abstract: According to one embodiment, a semiconductor device includes a substrate; a first transistor and a second transistor having their sources commonly coupled to each other; a light emitting element having an anode electrode and a cathode electrode; a light receiving element turning on or off the first transistor and the second transistor depending on a light emission state of the light emitting element; a first filter element coupled to the anode electrode of the light emitting element; and a second filter element coupled to the cathode electrode of the light emitting element.

公开(公告)号：US20250054517A1

公开(公告)日：2025-02-13

申请号：US18521329

申请日：2023-11-28

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

Inventor： Naomichi IKEDA

IPC: G11B20/12

Abstract: According to one embodiment, a magnetic disk drive of shingled magnetic recording (SMR), wherein user data is written to a disk with a header such as a preamble attached thereto, for each data frame including a plurality of blocks, which is a data area in a track of the disk to which the user data is written.

公开(公告)号：US12224229B2

公开(公告)日：2025-02-11

申请号：US17410508

申请日：2021-08-24

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor： Kyo Tanabiki

IPC: H01L23/495 ,  H01L21/48 ,  H01L23/31

Abstract: According to one embodiment, a semiconductor device includes a frame with a die pad and terminals extending from the die pad in a first direction. A groove is provided in an upper surface of the die pad. A semiconductor element is on the upper surface of the die pad but does not overlap the groove. A resin material covers the semiconductor element and is in the groove. The groove includes a bottom surface with an irregularity therein.

公开(公告)号：US12218215B2

公开(公告)日：2025-02-04

申请号：US17681410

申请日：2022-02-25

Applicant: TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION ,  KABUSHIKI KAISHA TOSHIBA

Inventor： Shunsuke Asaba ,  Yuji Kusumoto ,  Katsuhisa Tanaka ,  Yujiro Hara ,  Makoto Mizukami ,  Masaru Furukawa ,  Hiroshi Kono ,  Masanori Nagata

IPC: H01L29/45 ,  H01L21/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a first silicon carbide region of a first conductivity type, a second silicon carbide region of a second conductivity type on the first region, and a third silicon carbide region of a second conductivity type on the second region. Fourth and fifth silicon carbide region of the first conductivity type are on the third region. A first electrode has a first portion between the fourth region and fifth region in a first direction. A metal silicide layer is between the first portion and the third region, between the first portion and the fourth region in the first direction, and between the first portion and the fifth silicon carbide region in the first direction.

公开(公告)号：US12217805B2

公开(公告)日：2025-02-04

申请号：US17903617

申请日：2022-09-06

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

Inventor： Osamu Hirabayashi

IPC: G11C16/30 ,  G05F3/26 ,  G11C16/26 ,  G11C16/32

Abstract: A reference voltage generating circuit according to an embodiment includes: an original reference voltage generating unit that generates an original reference voltage; and a reference voltage correcting unit that decreases the original reference voltage as the temperature rises and outputs the original reference voltage as a reference voltage to a sense amplifier, and thus it is possible to perform highly reliable operation while the influence of the temperature is reduced.

公开(公告)号：US12217773B2

公开(公告)日：2025-02-04

申请号：US18244671

申请日：2023-09-11

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

Inventor： Yuki Kawamitsu

IPC: G11B33/12 ,  G11B19/20

Abstract: A disk device according to one embodiment includes magnetic disks, a spindle motor, a housing, a first board, and a first connector. The magnetic disks are arranged in an axial direction. The spindle motor rotates the magnetic disks about a first rotation axis. The magnetic disks and the spindle motor are accommodated in an inner space in the housing. The housing includes a first wall having the spindle motor attached thereto, and a second wall protruding from the first wall to surround the inner space. The first board is attached to an outer surface of the second wall. The first connector is attached to the first board and is connected to an external device. Each of the magnetic disks has a diameter of 80 mm or more and 100 mm or less. The housing has a maximum dimension of 26.2 mm or more in the axial direction.

公开(公告)号：US20250040053A1

公开(公告)日：2025-01-30

申请号：US18602927

申请日：2024-03-12

Applicant: KABUSHIKI KAISHA TOSHIBA ,  Toshiba Electronic Devices & Storage Corporation

Inventor： Eitaro Miyake

IPC: H05K1/18 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065 ,  H05K1/14

Abstract: According to one embodiment, a semiconductor device includes a first insulated circuit board, a second insulated circuit board, a first semiconductor chip and a first spacer. The first insulated circuit board includes a first conductive plate. The first conductive plate has a first conductive pattern. The first spacer is placed on the first conductive pattern. The first conductive pattern has a first side, a second side, a third side and a fourth side which surround the first spacer. The first side extends in a first direction. The second side continues to the first side and extends in a second direction that is orthogonal to the first direction. The third side continues to the second side and extends in the first direction. The fourth side continues to the third side and extends obliquely to the first direction and the second direction.

公开(公告)号：US12206019B2

公开(公告)日：2025-01-21

申请号：US17685257

申请日：2022-03-02

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor： Kanako Komatsu

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/45 ,  H01L29/49 ,  H01L49/02

Abstract: According to one embodiment, a semiconductor device includes a substrate having a first surface and an insulator that surrounds a first region of the first surface. A gate electrode is on the first region and has a first resistivity. A first conductor is also on the first region. The first conductor comprises a same material as the gate electrode, but has a second resistivity that is different from the first resistivity. The resistivity may be different, for example, by either use of different dopants/impurities or different concentrations of dopants/impurities. Resistivity may also be different due to inclusion of a metal silicide on the conductors or not.