- 专利标题： Circuit devices with gate seals
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申请号： US17321730申请日： 2021-05-17
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公开(公告)号： US11830930B2公开(公告)日： 2023-11-28
- 发明人: Sheng-Chou Lai , Tsung-Yu Chiang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： HAYNES AND BOONE, LLP
- 分案原申请号： US16124451 2018.09.07
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/8234 ; H01L29/66 ; H01L29/49 ; H01L21/02 ; H01L29/78 ; H01L21/321
摘要：
Various examples of a circuit device that includes gate stacks and gate seals are disclosed herein. In an example, a substrate is received that has a fin extending from the substrate. A placeholder gate is formed on the fin, and first and second gate seals are formed on sides of the placeholder gate. The placeholder gate is selectively removed to form a recess between side surfaces of the first gate seal and the second gate seal. A functional gate is formed within the recess and between the side surfaces of the first gate seal and the second gate seal.
公开/授权文献
- US20210280687A1 Circuit Devices with Gate Seals 公开/授权日：2021-09-09
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