- 专利标题： Semiconductor device
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申请号： US17699898申请日： 2022-03-21
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公开(公告)号： US11830945B2公开(公告)日： 2023-11-28
- 发明人: Kentaro Ichinoseki , Tatsuya Nishiwaki , Shingo Sato
- 申请人： Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人： Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- 当前专利权人地址： JP Tokyo; JP Tokyo
- 代理机构： Allen & Overy LLP
- 优先权： JP 19168488 2019.09.17
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/225 ; H01L29/06 ; H01L29/08 ; H01L29/66 ; H01L29/423 ; H01L29/40
摘要：
According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second electrode, a gate electrode, second semiconductor regions of a second conductivity type, third semiconductor regions of the first conductivity type, and a third electrode. The second electrode is provided in a plurality in second and third directions. Each second electrode opposes a portion of the first semiconductor region in the second and third directions with an insulating layer interposed. The gate electrode is provided around each second electrode. The first semiconductor region includes first regions provided respectively around the second electrodes and the second region provided around the first regions in the second and third directions. Impurity concentration of the first conductivity type in each of the first regions is higher than impurity concentration of the first conductivity type in the second region.
公开/授权文献
- US20220209011A1 SEMICONDUCTOR DEVICE 公开/授权日：2022-06-30
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