- 专利标题: TSV testing method and apparatus
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申请号: US17557512申请日: 2021-12-21
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公开(公告)号: US11835573B2公开(公告)日: 2023-12-05
- 发明人: Lee D. Whetsel
- 申请人: TEXAS INSTRUMENTS INCORPORATED
- 申请人地址: US TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: US TX Dallas
- 代理商 Carl G. Peterson; Frank D. Cimino
- 分案原申请号: US17020042 2020.09.14
- 主分类号: G01R31/28
- IPC分类号: G01R31/28 ; G01R31/3185 ; H01L21/66 ; H01L23/538 ; H01L23/522 ; H01L23/48
摘要:
An integrated circuit die includes a substrate of semiconductor material having a top surface, a bottom surface, and an opening through the substrate between the top surface and the bottom surface. A through silicon via (TSV) has a conductive body in the opening, has a top contact point coupled to the body at the top surface, and has a bottom contact point coupled to the body at the bottom surface. A scan cell has a serial input, a serial output, control inputs, a voltage reference input, a response input coupled to one of the contact points, and a stimulus output coupled to the other one of the contact points.
公开/授权文献
- US20220113348A1 TSV TESTING METHOD AND APPARATUS 公开/授权日:2022-04-14
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