Addressing a superconducting flux storage device may include applying a bias current, a low-frequency flux bias, and a high-frequency flux bias in combination to cause a combined address signal level to exceed a defined address signal latching level for the superconducting flux storage device. A bias current that, in combination with a low-frequency flux bias and a high-frequency flux bias, causes a combined address signal level to exceed a defined address signal latching level for a superconducting flux storage device is at least reduced by an asymmetry in the Josephson junctions of the CJJ. A low-frequency flux bias that, in combination with a bias current and a high-frequency flux bias, causes a combined address signal level to exceed a defined address signal latching level for a superconducting flux storage device is at least reduced by an asymmetry in the Josephson junctions of the CJJ.