Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17323407Application Date: 2021-05-18
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Publication No.: US11842964B2Publication Date: 2023-12-12
- Inventor: Jungho Do , Sanghoon Baek
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20200103160 2020.08.18
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L27/092 ; H01L27/02 ; H01L29/423 ; H01L29/786

Abstract:
A semiconductor device includes a substrate having an active region, a first group of standard cells arranged in a first row on the active region of the substrate and having a first height defined in a column direction, a second group of standard cells arranged in a second row on the active region of the substrate, and having a second height, and a plurality of power lines extending in a row direction and respectively extending along boundaries of the first and the second groups of standard cells. The first and second groups of standard cells each further include a plurality of wiring lines extending in the row direction and arranged in the column direction, and at least some of wiring lines in at least one standard cell of the first and second groups of standard cells are arranged at different spacings and/or pitches.
Public/Granted literature
- US20220059460A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-02-24
Information query
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