公开(公告)号：US20230290779A1

公开(公告)日：2023-09-14

申请号：US18175765

申请日：2023-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungho Do

IPC: H01L27/092 ,  H01L23/48 ,  H01L29/78 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L27/0924 ,  H01L23/481 ,  H01L29/7851 ,  H01L29/42392 ,  H01L29/0673

Abstract: An integrated circuit includes: (i) a first transistor having a first gate extending in a first direction, a first drain, and a first source that is separated from the first drain in a second direction, which is perpendicular to the first direction, (ii) a second transistor having a second gate extending in one of the first and second directions, a second drain, and a second source that is separated from the second drain in a third direction, which is perpendicular to the first and second directions, and (iii) a first connection structure that electrically connects the first transistor to the second transistor, and includes a pattern extending in the first direction between the first transistor and the second transistor.

公开(公告)号：US20220058326A1

公开(公告)日：2022-02-24

申请号：US17183630

申请日：2021-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bonghyun Lee ,  Jungho Do

IPC: G06F30/392 ,  H01L27/02 ,  H01L23/528

Abstract: An integrated circuit includes a first column including a plurality of first cells aligned and placed in a plurality of first rows, each first row having a first width and extending in a first horizontal direction, a second column including a plurality of second cells aligned and placed in a plurality of second rows, each second row having a second width and extending in the first horizontal direction, and an interface column extending in a second horizontal direction perpendicular to the first horizontal direction between the first column and the second column, wherein the interface column includes at least one well tap configured to provide a first supply voltage to a well, and at least one substrate tap configured to provide a second supply voltage to a substrate.

公开(公告)号：US20200220548A1

公开(公告)日：2020-07-09

申请号：US16820835

申请日：2020-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taejoong SONG ,  Jungho Do ,  Seungyoung Lee ,  Jonghoon Jung

IPC: H03K19/17724 ,  H01L27/02 ,  H01L29/06 ,  H01L23/528 ,  H01L29/423 ,  H01L27/088

Abstract: A semiconductor device is provided. The semiconductor device includes first and second logic cells adjacent to each other on a substrate, and a mixed separation structure extending in a first direction between the first and second logic cells. Each logic cell includes first and second active fins that protrude from the substrate, the first and second active fins extending in a second direction intersecting the first direction and being spaced apart from each other in the first direction, and gate electrodes extending in the first direction and spanning the first and second active fins, and having a gate pitch. The mixed separation structure includes a first separation structure separating the first active fin of the first logic cell from the first active fin of the second logic cell; and a second separation structure on the first separation structure. A width of the first separation structure is greater than the gate pitch.

公开(公告)号：US20240395713A1

公开(公告)日：2024-11-28

申请号：US18582859

申请日：2024-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangcheol Na ,  Jungho Do ,  Kyoungwoo Lee ,  Gukhee Kim ,  Minchan Gwak

IPC: H01L23/528 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes first power lines extending on a substrate in a first direction and spaced apart from each other in a second direction, back side power structures on a lower surface of the substrate, standard cells each including an active pattern, a gate pattern intersecting the active pattern, and contacts, power tap cells between at least some of the standard cells and each including vertical power vias, and second power lines electrically connecting at least some of the first power lines to each other. A first portion of the second power lines may extend onto the power tap cells and a second portion of the second power lines that is different from the first portion may extend onto the standard cells. The power tap cells may be arranged in every three or more rows of the standard cells in the second direction in a zigzag pattern.

公开(公告)号：US20240363532A1

公开(公告)日：2024-10-31

申请号：US18626985

申请日：2024-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungyoung Lee ,  Jungho Do

IPC: H01L23/528 ,  H01L23/522 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L23/5283 ,  H01L23/5226 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: An integrated circuit includes a standard cell including a first transistor and a second transistor each disposed on a front side of a substrate, a backside via passing through the substrate in a vertical direction with respect to the substrate, a backside wiring layer including a backside power rail disposed on a backside of the substrate and connected with a first source/drain of the first transistor through the backside via, and a backside contact extending in a first direction between the standard cell and the backside wiring layer and electrically connecting a second source/drain of the first transistor with a first source/drain of the second transistor, wherein a bottom level of the backside contact differs from a top level of the backside power rail, and the backside contact is electrically insulated from the backside power rail.

公开(公告)号：US12068315B2

公开(公告)日：2024-08-20

申请号：US17323707

申请日：2021-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungho Do ,  Sanghoon Baek

IPC: H01L27/06 ,  H01L23/50 ,  H01L23/522 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L23/50 ,  H01L23/5226 ,  H01L27/0688 ,  H01L29/6681 ,  H01L29/785

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including a first dummy region and a second dummy region spaced apart from the first dummy region; a device isolation layer filling a trench between the first dummy region and the second dummy region; a first dummy electrode provided on the first dummy region; a second dummy electrode provided on the second dummy region; a power line extending from the first dummy region to the second dummy region, the power line including an expanded portion provided on the device isolation layer, a width of the expanded portion being larger than a line width of a remaining portion of the power line; a power delivery network provided on a bottom surface of the substrate; and a through via extending through the substrate and the device isolation layer, and electrically connecting the power delivery network to the expanded portion. The through via and the expanded portion vertically overlap.

公开(公告)号：US20230290784A1

公开(公告)日：2023-09-14

申请号：US18175696

申请日：2023-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungho Do ,  Jisu Yu ,  Hyeongyu You ,  Yunkyeong Jang ,  Minjae Jeong

IPC: H01L27/118 ,  H01L27/02

CPC classification number: H01L27/11807 ,  H01L27/0207 ,  H01L2027/11809

Abstract: An integrated circuit may include a first active pattern group extending in a first direction in a first row and including a plurality of first active patterns overlapping each other in the first direction, the first row extending in the first direction, and a plurality of gate electrodes extending in a second direction perpendicular to the first direction in the first row. The plurality of first active patterns may include any two first active patterns that are adjacent to each other in the first direction, the two first active patterns have first and second widths in the second direction, respectively, and the first and second widths are identical or are different by a first offset or a second offset.

公开(公告)号：US20220344463A1

公开(公告)日：2022-10-27

申请号：US17719996

申请日：2022-04-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hakchul Jung ,  Myunggil Kang ,  Jungho Do ,  Sanghoon Baek

IPC: H01L29/06 ,  H01L27/088 ,  H01L29/786 ,  H01L23/48

Abstract: An integrated circuit may include a first cell and a second cell. The first cell includes a first transistor in which nanosheets included in a first nanosheet stack and a second nanosheet stack extend in a first direction to pass through a first gate electrode that extends in a second direction intersecting with the first direction. The second cell includes a second transistor in which one or more nanosheets included in a third nanosheet stack extends in the first direction to pass through a second gate electrode that extends in the second direction. A length of the first cell in the second direction may be greater than a length of the second cell in the second direction.

公开(公告)号：US20220262786A1

公开(公告)日：2022-08-18

申请号：US17670626

申请日：2022-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jisu Yu ,  Jungho Do ,  Jaewoo Seo ,  Hyeongyu You ,  Minjae Jeong

IPC: H01L27/02 ,  H01L27/118

Abstract: An integrated circuit including a first standard cell placed continuously on a row having a first height and a row having a second height different from the first height. The integrated circuit also includes a second standard cell continuously placed on a row having the first height and a row having the second height, a plurality of first power lines formed on boundaries of the plurality of rows and configured to supply a first supply voltage to the standard cells, and a plurality of second power lines formed on boundaries of the plurality of rows and configured to supply a second supply voltage to the standard cells. A placement sequence of the power lines supplying a voltage to the first standard cell being different from a placement sequence of the power lines supplying a voltage to the second standard cell.

公开(公告)号：US20240234294A1

公开(公告)日：2024-07-11

申请号：US18393092

申请日：2023-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jisu Yu ,  Jungho Do ,  Sungyup Jung

IPC: H01L23/50 ,  H01L23/48 ,  H01L23/538 ,  H01L25/16

CPC classification number: H01L23/50 ,  H01L23/481 ,  H01L23/5386 ,  H01L25/16

Abstract: An integrated circuit includes: a plurality of first power rails extending in a first horizontal direction and configured to provide a first power supply voltage that is applied thereto; a plurality of second power rails extending in the first horizontal direction and configured to provide a second power supply voltage that is applied thereto; and a power line in a switch cell area and extending in the first horizontal direction the power line being configured to provide a global power supply voltage that is applied thereto, wherein the plurality of first power rails and the plurality of second power rails are alternately arranged in a second horizontal direction vertical to the first horizontal direction, wherein the plurality of first power rails, the plurality of second power rails, and the power line form a front-side pattern on a same layer, and wherein the power line is provided between two second power rails adjacent to each other in the first horizontal direction, among the plurality of second power rails.