- 专利标题: Vapor deposition device and method for manufacturing epitaxial silicon wafer
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申请号: US17417496申请日: 2019-09-11
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公开(公告)号: US11846039B2公开(公告)日: 2023-12-19
- 发明人: Kazuhiro Narahara , Masayuki Tsuji , Haku Komori
- 申请人: SUMCO CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: SUMCO CORPORATION
- 当前专利权人: SUMCO CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Greenblum & Bernstein, P.L.C.
- 优先权: JP 18241366 2018.12.25
- 国际申请: PCT/JP2019/035621 2019.09.11
- 国际公布: WO2020/137021A 2020.07.02
- 进入国家日期: 2021-06-23
- 主分类号: C30B25/12
- IPC分类号: C30B25/12 ; C30B29/06 ; C23C16/24 ; C23C16/458 ; C30B25/20
摘要:
A vapor deposition apparatus includes a disc-shaped susceptor and a susceptor support member that supports and rotates the susceptor. The susceptor has a plurality of fitting grooves. The susceptor support member is provided with a plurality of support pins to be fitted in the respective plurality of fitting grooves. The fitting grooves each have an inclined portion that relatively moves the support pin with respect to the fitting groove in a circumferential direction of the susceptor with the support pin kept in contact by virtue of a self-weight of the susceptor and a positioning portion that positions the support pin relatively moved by the inclined portion at a specific position in the circumferential direction. The inclined portion and the positioning portion are formed continuously in a radial direction of the susceptor.
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