Invention Grant
- Patent Title: Thermal dissipation through seal rings in 3DIC structure
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Application No.: US17335588Application Date: 2021-06-01
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Publication No.: US11848247B2Publication Date: 2023-12-19
- Inventor: Jing-Cheng Lin , Shih-Yi Syu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- The original application number of the division: US15344838 2016.11.07
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/367 ; H01L23/00 ; H01L23/48 ; H01L25/065 ; H01L21/48 ; H01L21/768 ; H01L25/075
Abstract:
A die includes a semiconductor substrate, a through-via penetrating through the semiconductor substrate, a seal ring overlying and connected to the through-via, and an electrical connector underlying the semiconductor substrate and electrically coupled to the seal ring through the through-via.
Public/Granted literature
- US20210287957A1 Thermal Dissipation Through Seal Rings in 3DIC Structure Public/Granted day:2021-09-16
Information query
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