Invention Grant
- Patent Title: Semiconductor component with edge termination region
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Application No.: US17307632Application Date: 2021-05-04
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Publication No.: US11848377B2Publication Date: 2023-12-19
- Inventor: Anton Mauder , Hans-Joachim Schulze , Matteo Dainese , Elmar Falck , Franz-Josef Niedernostheide , Manfred Pfaffenlehner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE 2018102279.4 2018.02.01
- The original application number of the division: US16263244 2019.01.31
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/40

Abstract:
A semiconductor component includes a semiconductor body having opposing first surface and second surfaces, and a side surface surrounding the semiconductor body. The semiconductor component also includes an active region including a first semiconductor region of a first conductivity type, which is electrically contacted via the first surface, and a second semiconductor region of a second conductivity type, which is electrically contacted via the second surface. The semiconductor component further includes an edge termination region arranged in a lateral direction between the first semiconductor region of the active region and the side surface, and includes a first edge termination structure and a second edge termination structure. The second edge termination structure is arranged in the lateral direction between the first edge termination structure and the side surface and extends from the first surface in a vertical direction more deeply into the semiconductor body than the first edge termination structure.
Public/Granted literature
- US20210257489A1 Semiconductor Component with Edge Termination Region Public/Granted day:2021-08-19
Information query
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