Invention Grant
- Patent Title: Narrow linewidth semiconductor laser device
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Application No.: US17665566Application Date: 2022-02-06
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Publication No.: US11848539B2Publication Date: 2023-12-19
- Inventor: Georgios Margaritis
- Applicant: Georgios Margaritis
- Applicant Address: US CA Los Altos
- Assignee: IOPTIS CORP.
- Current Assignee: IOPTIS CORP.
- Current Assignee Address: US CA Los Altos
- Main IPC: H01S3/30
- IPC: H01S3/30 ; H01S5/14 ; H01S5/125 ; H01S5/02251 ; H01S5/024 ; H01S5/06 ; H01S5/12

Abstract:
A novel narrow linewidth laser device is disclosed that includes a gain element, such as a quantum well, quantum dot or bulk waveguide laser chip and a fiber Bragg grating formed in an optical fiber positioned to receive the output from a first end of the gain element and return a portion of said output back into the gain element. The fiber Bragg grating is constructed so that its power reflectivity profile has a ratio of reflectivity slope over reflectivity at the 3 dB point below the reflectivity peak on the red side (longer wavelength side) of the grating larger than a value of 2/nm. The operating wavelength of the device may be tuned thermally, electrically, or thermo-electrically to be on the red side of the fiber Bragg grating reflectivity profile, preferably, but not necessarily, at the 3 dB point below the reflectivity peak or lower. In another embodiment, a second grating is optically coupled to a second end of the gain element and has a reflectivity profile that overlaps at least a portion of the reflectivity profile of the front end fiber Bragg grating.
Public/Granted literature
- US20220263290A1 NARROW LINEWIDTH SEMICONDUCTOR LASER DEVICE Public/Granted day:2022-08-18
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