- 专利标题: Narrow linewidth semiconductor laser device
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申请号: US17665566申请日: 2022-02-06
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公开(公告)号: US11848539B2公开(公告)日: 2023-12-19
- 发明人: Georgios Margaritis
- 申请人: Georgios Margaritis
- 申请人地址: US CA Los Altos
- 专利权人: IOPTIS CORP.
- 当前专利权人: IOPTIS CORP.
- 当前专利权人地址: US CA Los Altos
- 主分类号: H01S3/30
- IPC分类号: H01S3/30 ; H01S5/14 ; H01S5/125 ; H01S5/02251 ; H01S5/024 ; H01S5/06 ; H01S5/12
摘要:
A novel narrow linewidth laser device is disclosed that includes a gain element, such as a quantum well, quantum dot or bulk waveguide laser chip and a fiber Bragg grating formed in an optical fiber positioned to receive the output from a first end of the gain element and return a portion of said output back into the gain element. The fiber Bragg grating is constructed so that its power reflectivity profile has a ratio of reflectivity slope over reflectivity at the 3 dB point below the reflectivity peak on the red side (longer wavelength side) of the grating larger than a value of 2/nm. The operating wavelength of the device may be tuned thermally, electrically, or thermo-electrically to be on the red side of the fiber Bragg grating reflectivity profile, preferably, but not necessarily, at the 3 dB point below the reflectivity peak or lower. In another embodiment, a second grating is optically coupled to a second end of the gain element and has a reflectivity profile that overlaps at least a portion of the reflectivity profile of the front end fiber Bragg grating.
公开/授权文献
- US20220263290A1 NARROW LINEWIDTH SEMICONDUCTOR LASER DEVICE 公开/授权日:2022-08-18
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