Invention Grant
- Patent Title: Memory device and operation method thereof
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Application No.: US16522986Application Date: 2019-07-26
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Publication No.: US11853890B2Publication Date: 2023-12-26
- Inventor: Chao-Hung Wang , Yu-Hsuan Lin , Ming-Liang Wei , Dai-Ying Lee
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G06N3/082
- IPC: G06N3/082 ; G06N3/063 ; G06N3/048

Abstract:
Provided is an operation method for a memory device, the memory device being used for implementing an Artificial Neural Network (ANN). The operation method includes: reading from the memory device a weight matrix of a current layer of a plurality of layers of the ANN to extract a plurality of neuro values; determining whether to perform calibration; when it is determined to perform calibration, recalculating and updating a mean value and a variance value of the neuro values; and performing batch normalization based on the mean value and the variance value of the neuro values.
Public/Granted literature
- US20200349428A1 MEMORY DEVICE AND OPERATION METHOD THEREOF Public/Granted day:2020-11-05
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