Invention Grant
- Patent Title: Semiconductor device and method
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Application No.: US17874614Application Date: 2022-07-27
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Publication No.: US11854798B2Publication Date: 2023-12-26
- Inventor: Ching-Yu Chang , Jei Ming Chen , Tze-Liang Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/768 ; H01L21/308 ; H01L21/3065
Abstract:
A method of forming a semiconductor device includes forming a mask layer over a substrate and forming an opening in the mask layer. A gap-filling material is deposited in the opening. A plasma treatment is performed on the gap-filling material. The height of the gap-filling material is reduced. The mask layer is removed. The substrate is patterned using the gap-filling material as a mask.
Public/Granted literature
- US20220367179A1 Semiconductor Device and Method Public/Granted day:2022-11-17
Information query
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