- 专利标题： Germanium hump reduction
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申请号： US17814283申请日： 2022-07-22
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公开(公告)号： US11854819B2公开(公告)日： 2023-12-26
- 发明人: Shih-Hao Fu , Hung-Ju Chou , Che-Lun Chang , Jiun-Ming Kuo , Yuan-Ching Peng , Sung-En Lin , Nung-Che Cheng , Chunyao Wang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： HAYNES AND BOONE, LLP
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L29/66 ; H01L29/423 ; H01L29/786 ; H01L21/02 ; H01L29/06
摘要：
The present disclosure provides methods of forming semiconductor devices. A method according to the present disclosure includes receiving a workpiece that includes a stack of semiconductor layers, depositing a first pad oxide layer on a germanium-containing top layer of the stack, depositing a second pad oxide layer on the first pad oxide layer, depositing a pad nitride layer on the second pad oxide layer, and patterning the stack using the first pad oxide layer, the second pad oxide layer, and the pad nitride layer as a hard mask layer. The depositing of the first pad oxide layer includes a first oxygen plasma power and the depositing of the second pad oxide layer includes a second oxygen plasma power greater than the first oxygen plasma power.
公开/授权文献
- US20220375756A1 Germanium Hump Reduction 公开/授权日：2022-11-24
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