Invention Grant
- Patent Title: Integrated circuit device
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Application No.: US17574414Application Date: 2022-01-12
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Publication No.: US11854823B2Publication Date: 2023-12-26
- Inventor: Meng-Han Lin , Chih-Ren Hsieh , Chih-Pin Huang , Ching-Wen Chan
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- The original application number of the division: US16716151 2019.12.16
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L21/308 ; H01L21/762 ; H10B41/30

Abstract:
An integrated circuit device includes a substrate, a first isolation feature, a memory cell, and a semiconductor device. The substrate has a cell region, a peripheral region, and a transition region between the cell region and the peripheral region. The first isolation feature is in the transition region. The substrate includes a protrusion portion between a first portion and a second portion of the first isolation feature, the second portion is between the first portion and the cell region, and a top surface of the first portion of the first isolation feature has a first part and a second part lower than the first part, and the second part is between the first part and the second portion of the first isolation feature. The memory cell is over the cell region of the substrate. The semiconductor device is over the peripheral region of the substrate.
Public/Granted literature
- US20220139718A1 INTEGRATED CIRCUIT DEVICE Public/Granted day:2022-05-05
Information query
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