Invention Grant
- Patent Title: Thermally conductive wafer layer
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Application No.: US17138541Application Date: 2020-12-30
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Publication No.: US11854933B2Publication Date: 2023-12-26
- Inventor: Benjamin Stassen Cook , Nazila Dadvand , Archana Venugopal , Daniel Lee Revier
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Ming Wai Choy; Frank D. Cimino
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L23/532 ; H01L21/683 ; H01L21/3205 ; H01L21/78

Abstract:
In described examples, a semiconductor wafer with a thermally conductive surface layer comprises a bulk semiconductor layer having a first surface and a second surface, circuitry on the first surface, a metallic layer attached to the first surface or the second surface, and a graphene layer attached to the metallic layer. The first surface opposes the second surface. The metallic layer comprises a transition metal.
Public/Granted literature
- US20220208640A1 THERMALLY CONDUCTIVE WAFER LAYER Public/Granted day:2022-06-30
Information query
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