- 专利标题: Memory macro including through-silicon via
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申请号: US18153475申请日: 2023-01-12
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公开(公告)号: US11854943B2公开(公告)日: 2023-12-26
- 发明人: Hidehiro Fujiwara , Tze-Chiang Huang , Hong-Chen Cheng , Yen-Huei Chen , Hung-Jen Liao , Jonathan Tsung-Yung Chang , Yun-Han Lee , Lee-Chung Lu
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. , TSMC NANJING COMPANY, LIMITED
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC NANJING COMPANY, LIMITED
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.,TSMC NANJING COMPANY, LIMITED
- 当前专利权人地址: TW Hsinchu; CN Nanjing
- 代理机构: Hauptman Ham, LLP
- 优先权: CN 2110263207.8 2021.03.11
- 主分类号: G11C16/04
- IPC分类号: G11C16/04 ; H01L23/48 ; H10B10/00 ; G11C11/418 ; H01L21/768
摘要:
An integrated circuit (IC) package includes a logic die, a substrate, a memory die positioned between the logic die and the substrate, and a power distribution structure configured to electrically couple the logic die to the substrate. The power distribution structure includes a plurality of conductive segments positioned between the logic die and the memory die, a plurality of bump structures positioned between the memory die and the substrate, and a plurality of through-silicon vias (TSVs) electrically coupled to the plurality of conductive segments and the plurality of bump structures, and a TSV of the plurality of TSVs extends through, and is electrically isolated from, a memory macro of the memory die.
公开/授权文献
- US20230170281A1 MEMORY MACRO INCLUDING THROUGH-SILICON VIA 公开/授权日:2023-06-01
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