Invention Grant
- Patent Title: Semiconductor device with reduced resistance and method for manufacturing the same
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Application No.: US17389141Application Date: 2021-07-29
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Publication No.: US11854973B2Publication Date: 2023-12-26
- Inventor: Fei Fan Duan , Fong-yuan Chang , Chi-Yu Lu , Po-Hsiang Huang , Chih-Liang Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/522 ; G06F30/398 ; G06F119/12 ; H01L23/532 ; G03F1/36

Abstract:
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first conductive pattern on a substrate, a second conductive pattern above the first conductive pattern, and a third conductive pattern above the first conductive pattern, all extending along a first direction. The first conductive pattern is electrically connected in parallel to the second conductive pattern and the third conductive pattern.
Public/Granted literature
- US20220359392A1 SEMICONDUCTOR DEVICE WITH REDUCED RESISTANCE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-11-10
Information query
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