Invention Grant
- Patent Title: Ferroeolectric memories with ferroelectric composite layer
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Application No.: US17368686Application Date: 2021-07-06
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Publication No.: US11856789B2Publication Date: 2023-12-26
- Inventor: Yu-De Lin , Po-Chun Yeh , Pei-Jer Tzeng
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- Current Assignee Address: TW Hsinchu
- Priority: TW 0116532 2021.05.07
- Main IPC: H10B53/30
- IPC: H10B53/30 ; G11C11/22

Abstract:
A ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, a ferroelectric composite layer disposed between the first electrode and the second electrode, and a first insulating layer disposed on one side of the ferroelectric composite layer. The ferroelectric composite layer includes a first electrode layer, a second electrode layer, a ferroelectric layer and an antiferroelectric layer. The first electrode layer is opposite to the second electrode layer, and the ferroelectric layer and the antiferroelectric layer are disposed between the first electrode layer and the second electrode layer.
Public/Granted literature
- US20220359549A1 FERROEOLECTRIC MEMORIES Public/Granted day:2022-11-10
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