Invention Grant
- Patent Title: Semiconductor memory device with selection patterns, storage patterns, and a gap fill layer and method for fabricating the same
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Application No.: US17364378Application Date: 2021-06-30
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Publication No.: US11856794B2Publication Date: 2023-12-26
- Inventor: Dong Sung Choi , Jong Uk Kim , Kwang Min Park , Zhe Wu , Ja Bin Lee , Jae Ho Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR 20200105869 2020.08.24
- Main IPC: H10B63/00
- IPC: H10B63/00 ; H10N70/00

Abstract:
A semiconductor memory device includes a first memory cell provided on a substrate, a second memory cell provided on the substrate and spaced apart from the first memory cell, a passivation layer extending along a side surface of the first memory cell and a side surface of the second memory cell, and a gap fill layer covering the passivation layer. Each of the first memory cell and the second memory cell includes a selection pattern having ovonic threshold switching characteristics, and a storage pattern provided on the selection pattern. The passivation layer includes a lower portion filling a space between the selection pattern of the first memory cell and the selection pattern of the second memory cell, and an upper portion extending along a side surface of the storage pattern of each of the first memory cell and the second memory cell.
Public/Granted literature
- US20220059615A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2022-02-24
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