- Patent Title: Photodetector device having avalanche photodiodes two-dimensionally arranged on a compound semiconductor layer and quenching element connected in series to the photodiodes
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Application No.: US17384915Application Date: 2021-07-26
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Publication No.: US11860032B2Publication Date: 2024-01-02
- Inventor: Takuya Fujita , Yusei Tamura , Kenji Makino , Takashi Baba , Koei Yamamoto
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JP 18011824 2018.01.26
- Main IPC: H01L31/02
- IPC: H01L31/02 ; G01J1/44 ; H01L27/144 ; H01L31/107

Abstract:
A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.
Public/Granted literature
- US20210356319A1 PHOTODETECTOR DEVICE Public/Granted day:2021-11-18
Information query
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